Search results for "Single electron"

Electron Accumulative Molecules.

2018

With the goal to produce molecules with high electron accepting capacity and low reorganization energy upon gaining one or more electrons, a synthesis procedure leading to the formation of a B–N(aromatic) bond in a cluster has been developed. The research was focused on the development of a molecular structure able to accept and release a specific number of electrons without decomposing or change in its structural arrangement. The synthetic procedure consists of a parallel decomposition reaction to generate a reactive electrophile and a synthesis reaction to generate the B–N(aromatic) bond. This procedure has paved the way to produce the metallacarboranylviologen [M(C2B9H11)(C2B9H10)-NC5H4-…

A reinvestigation of compound CpMo(PMe3)2(CH3)2: Alkylation by single electron transfer and radical addition?

2001

International audience; The synthesis of the half-sandwich molybdenum(III) diphosphine dimethyl complex CpMo(PMe3)2(CH3)2 has been reinvestigated. The compound was obtained from the corresponding dichloro complex CpMo(PMe3)2Cl2 and methyllithium at low temperatures and isolated as a crystalline product by conducting all operations at temperatures lower than −10 °C. The complex is thermally unstable at room temperature but has been fully characterised by EPR spectroscopy, cyclic voltammetry and X-ray diffraction. The formation reaction is retarded by excess phosphine. On the basis of this and other related observations, a mechanism involving phosphine pre-dissociation followed by single elec…

Memory effects in single-electron nanostructures

2001

We investigate the memory function at room temperature in devices based on quantum dots. By Low Pressure Chemical Vapour Deposition (LPCVD) we deposited Si dots embedded in SiO2. On these devices flat band voltage shifts were well detected at low write voltages for write times of the order of milliseconds, and furthermore, a plateau in the flat band voltage shift, maybe consequence of Coulomb blockdale, was observed.

Synchronization of coupled single-electron circuits based on nanoparticles and tunneling junctions

2009

We explore theoretically the synchronization properties of a device composed of coupled single-electron circuits whose building blocks are nanoparticles interconnected with tunneling junctions. Elementary nanoscillators can be achieved by a single-electron tunneling cell where the relaxation oscillation is induced by the tunneling. We develop a model to describe the synchronization of the nanoscillators and present sample calculations to demonstrate that the idea is feasible and could readily find applications. Instead of considering a particular system, we analyze the general properties of the device making use of an ideal model that emphasizes the essential characteristics of the concept.…

Memory effects in MOS capacitors with silicon quantum dots

2001

To form crystalline Si dots embedded in SiO2, we have deposited thin films of silicon-rich oxide (SRO) by plasma-enhanced chemical vapor deposition of SiH4 and O2. Then the materials have been annealed in N2 ambient at temperatures between 950°C and 1100°C. Under such processing, the supersaturation of Si in the amorphous SRO film produces the formation of crystalline Si dots embedded in SiO2. The narrow dot size distributions, analyzed by transmission electron microscopy, are characterized by average grain radii and standard deviations down to about 1 nm. The memory functions of such structures has been investigated in MOS capacitors with a SRO film sandwiched between two thin SiO2 layers …

LONG TERM CHARGE RELAXATION IN SILICON SINGLE ELECTRON TRANSISTORS

2001

Multi-resolution analysis generated by a seed function

2009

In this paper we use the equivalence result originally proved by the author, which relates a multiresolution analysis (MRA) of ℒ2(R) and an orthonormal set of single electron wave functions in the lowest Landau level, to build up a procedure which produces, starting with a certain square-integrable function, a MRA of ℒ2(R). © 2003 American Institute of Physics.

Memory effects in MOS devices based on Si quantum dots

2003

Silicon quantum dots have been deposited on top of a 3-nm tunnel oxide by Low Pressure Chemical Vapour Deposition (LPCVD) and coated with a 7-nm Chemical Vapour Deposited (CVD) oxide. This stack was then incorporated in Metal-Oxide-Semiconductor structure and used as floating gate of a memory cell. The presence of 3 nm of tunnel oxides allows the injection of the charge by direct tunnel (DT) using low voltages for both program and erase operations. The charge stored in the quantum dots is able to produce a well-detectable flat band shift in the capacitors or, equivalently, a threshold voltage shift in the transistors. Furthermore, due to the presence of SiO 2 between the grains, the lateral…

Programming options for nanocrystal MOS memories

2003

Nanocrystal memories represent a promising candidate for the scaling of FLASH memories. In these devices, the charge is not stored in a continuous floating gate but in a discontinuous layer composed by numerous discrete silicon quantum dots well separated one from the other.The nanocrystals of radius of few nanometers are realized by chemical vapor deposition (CVD) of silicon on the tunnel oxide of 2.8 nm of thickness. These islands have been coated with a control oxide of 7 nm formed by CVD and incorporated in Metal-Oxide-Semiconductor structure. The devices are programmed and erased by tunnelling using low voltages and fast times. In addition, the programming can be easily achieved also b…

Basic properties of the F-type centers in halides, oxides and perovskites

2010

We present a short survey of the optical properties of primary radiation-induced point defects in alkali halides, simple oxides and some ABO3 perovskites. We discuss in details the optical properties of single electron F and F + centers in rock-salt (f.c.c.) alkali halides and oxides and show that the Mollwo–Ivey law well-known for the F-type centers in alkali halides may be extended for other rock-salt structure insulators. We also discuss the major differences in point defect production mechanisms in halides and oxides. We show that the Rabin–Klick diagram may be generalized for a whole family of alkali halides. The F-type center migration and aggregation into metal colloids in alkali hal…